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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1113 DESCRIPTION *With TO-66 package *High current capacity *Wide area of safe operation APPLICATIONS *For power amplifier and switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 120 100 5 6 40 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1113 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=25mA ; IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V A ICEO Collector cut-off current VCE=120V; IB=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 A hFE DC current gain IC=5A ; VCE=4V 30 fT Transition frequency IC=0.5A ; VCE=12V 10 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1113 Fig.2 Outline dimensions 3 |
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